stW11NB80 n-channel 800v - 0.65 w - 11a - t0-247 powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 800 v v dgr drain- gate voltage (r gs =20k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c11a i d drain current (continuous) at t c =100 o c6.9a i dm ( ? ) drain current (pulsed) 44 a p tot total dissipation at t c =25 o c190w derating factor 1.52 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area i sd 11a, di/dt 200a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds(on) i d stW11NB80 800 v < 0.8 w 11 a july 1999 1 2 3 to-247 1/8 www.datasheet.co.kr datasheet pdf - http://www..net/
thermal data r thj-case thermal resistance junction-case max 0.66 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 500 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 800 v i dss zero g ate voltage drain current (v gs =0) v ds =maxrating v ds = max rating t c =125 o c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =5.5a 0.65 0.8 w w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 11 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =5.5 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 2900 350 33 pf pf pf stW11NB80 2/8 www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 400 v i d =5a r g =4.7 w v gs =10v 30 13 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d =10a v gs =10v r g =4.7 w v gs =10v 70 18 31 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d =10a r g =4.7 w v gs =10v 26 23 37 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 11 44 a a v sd ( * ) forward on voltage i sd =11a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100 a/ m s v dd = 100 v t j =150 o c 900 9 20 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance stW11NB80 3/8 www.datasheet.co.kr datasheet pdf - http://www..net/
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations stW11NB80 4/8 www.datasheet.co.kr datasheet pdf - http://www..net/
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature stW11NB80 5/8 www.datasheet.co.kr datasheet pdf - http://www..net/
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stW11NB80 6/8 www.datasheet.co.kr datasheet pdf - http://www..net/
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data stW11NB80 7/8 www.datasheet.co.kr datasheet pdf - http://www..net/
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysi a - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . stW11NB80 8/8 www.datasheet.co.kr datasheet pdf - http://www..net/
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